Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same

US10361289B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Wei Zhao · Zhuhai, CN
• Shahab Siddiqui · Clifton Park, US
• Haiting Wang · Clifton Park, US
• Ting-Hsiang Hung · Clifton Park, US
• Yiheng Xu · Hopewell Junction, US
• Beth Baumert · Scottsdale, US
• Jinping Liu · Ballston Lake, US
• Scott Beasor · Greenwich, US
• Yue Zhong · Ballston Lake, US
• Shesh Mani Pandey · Saratoga Springs, US

Key dates

• Filing date: Mar 22, 2018
• Grant date: Jul 23, 2019
• Expiry date: Mar 22, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of thermally oxidizing a Si fin to form an oxide layer over the Si fin and then forming an ALD oxide layer over the oxide layer and resulting device are provided. Embodiments include forming a plurality of Si fins on a Si substrate; forming a dielectric layer over the plurality of Si fins and the Si substrate; recessing the dielectric layer, exposing a top portion of the plurality of Si fins; thermally oxidizing surface of the top portion of the plurality of Si fins, an oxide layer formed; and forming an ALD oxide layer over the oxide layer.