Transistors with H-shaped or U-shaped channels and method for forming the same
US10381459B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Jan 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure including a first substantially U-shaped and/or H-shaped channel is disclosed. The semiconductor structure may further include a second substantially U-shaped and/or H-shaped channel positioned above the first channel. A method of forming a substantially U-shaped and/or H-shaped channel is also disclosed. The method may include forming a fin structure on a substrate where the fin structure includes an alternating layers of sacrificial semiconductor and at least one silicon layer or region. The method may further include forming additional silicon regions vertically on sidewalls of the fin structure. The additional silicon regions may contact the silicon layer or region of the fin structure to form the substantially U-shaped and/or H-shaped channel(s). The method may further include removing the sacrificial semiconductor layers and forming a gate structure around the substantially U-shaped and/or substantially H-shaped channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.