Patent · US Active

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates

US10385236B2 · kind B2 · utility

2Cited by

4References

14Claims

0Family size

Assignee

BASF SE

Inventors

Robert REICHARDT · Ludwigshafen am Rhein, DE
Max Siebert · Ludwigshafen, DE
Yongqing Lan · Potsdam, US
Michael Lauter · Mannheim, DE
Sheik Ansar Usman Ibrahim · Waterloo, BE
Reza Golzarian · Beaverton, US
Haci Osman GUEVENC · Heidelberg, DE
Julian Proelss · Allschwil, CH
Leonardus Leunissen · Ludwigshafen, DE

Key dates

Filing date	Dec 22, 2015
Grant date	Aug 20, 2019
Priority date	—
Expiry date	Dec 22, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/7684
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.