Methods of forming a gate contact structure for a transistor
US10490641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2017 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Sep 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed includes, among other things, forming a conductive source/drain metallization structure adjacent a gate, forming a gate contact opening that exposes at least a portion of a front face of the conductive source/drain metallization structure and a portion of an upper surface of a gate structure of the gate. In this example, the method further includes forming an internal insulating spacer within the gate contact opening that is positioned on and in contact with the exposed portion of the front face, wherein the spacer leaves at least a portion of the upper surface of the gate structure exposed, and forming a conductive gate contact structure (CB) in the conductive gate contact opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.