Chemical mechanical polishing (CMP) composition

US10570316B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Robert REICHARDT · Ludwigshafen am Rhein, DE
• Max Siebert · Ludwigshafen, DE
• Yongqing Lan · Potsdam, US
• Michael Lauter · Mannheim, DE
• Haci Osman GUEVENC · Heidelberg, DE
• Julian Proelss · Allschwil, CH
• Sheik Ansar Usman Ibrahim · Waterloo, BE
• Reza Golzarian · Beaverton, US

Key dates

• Filing date: Jul 14, 2015
• Grant date: Feb 25, 2020
• Expiry date: Jul 14, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09G1/02
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.