Patent · US Active

Method of manufacturing a semiconductor device including an LDMOS transistor

US10629727B2 · kind B2 · utility

1Cited by

17References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
Matthias Zigldrum · Regensburg, DE
Michaela Braun · Regensburg, DE
Jan Ropohl · Regensburg, DE

Key dates

Filing date	Aug 10, 2018
Grant date	Apr 21, 2020
Priority date	—
Expiry date	Aug 10, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/112
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a metallization structure arranged on the front surface. The metallization structure includes at least one cavity arranged in at least one dielectric layer. Related methods of manufacture are also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.