Chamfered replacement gate structures

US10636890B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Haiting Wang · Clifton Park, US
• Rongtao Lu · Lawrence, US
• Chih-Chiang Chang · Tucson, US
• Guowei Xu · Lawrence, US
• Hui Zang · Guilderland, US
• Scott Beasor · Greenwich, US
• Ruilong Xie · Niskayuna, US

Key dates

• Filing date: May 8, 2018
• Grant date: Apr 28, 2020
• Expiry date: May 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76897
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to chamfered replacement gate structures and methods of manufacture. The structure includes: a recessed gate dielectric material in a trench structure; a plurality of recessed workfunction materials within the trench structure on the recessed gate dielectric material; a plurality of additional workfunction materials within the trench structure and located above the recessed gate dielectric material and the plurality of recessed workfunction materials; a gate metal within the trench structure and over the plurality of additional workfunction materials, the gate metal and the plurality of additional workfunction materials having a planar surface below a top surface of the trench structure; and a capping material over the gate metal and the plurality of additional workfunction materials.