Selective deposition defects removal by chemical etch

US10643840B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jeffrey W. Anthis · San Jose, US
• Chang Ke · Sunnyvale, US
• Pratham Jain · Santa Clara, US
• Benjamin Schmiege · Santa Clara, US
• Guoqiang Jian · San Jose, US
• Michael S. Jackson · Sunnyvale, US
• Lei Zhou · Tianjin, CN
• Paul F. Ma · Santa Clara, US
• Liqi Wu · San Jose, US

Key dates

• Filing date: Sep 12, 2018
• Grant date: May 5, 2020
• Expiry date: Nov 2, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67288
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.