In-situ CVD and ALD coating of chamber to control metal contamination
US10704141B2 · kind B2 · utility
6Cited by
71References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 12, 2019 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Apr 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3288
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.