Gate contact structure for a transistor
US10727308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2019 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Aug 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One device disclosed herein includes a gate above a semiconductor substrate, the gate comprising a gate structure and a gate cap, and conductive source/drain metallization structures adjacent the gate, each of the conductive source/drain metallization structures having a front face and a recess defined in each of the conductive source/drain metallization structures. In this example, the device further includes a spacer structure comprising recess filling portions that substantially fill the recesses and a portion that extends across a portion of the upper surface of the gate cap, wherein a portion of the gate cap is exposed within the spacer structure, an insulating material within the spacer structure and on the exposed portion of the gate cap, a gate contact opening that exposes a portion of an upper surface of the gate structure, and a conductive gate contact structure in the conductive gate contact opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.