Metallic interconnect, a method of manufacturing a metallic interconnect, a semiconductor arrangement and a method of manufacturing a semiconductor arrangement

US10734352B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Irmgard Escher-Poeppel · Regensburg, DE
• Khalil Hosseini · Weihmichl, DE
• Johannes Lodermeyer · Kinding, DE
• Joachim Mahler · Regensburg, DE
• Thorsten Meyer · Regensburg, DE
• Georg Meyer-Berg · Birkenfeld, DE
• Ivan Nikitin · Regensburg, DE
• Reinhard Pufall · Birkenfeld, DE
• Edmund Riedl · Bergneustadt, DE
• Klaus Schmidt · Schwieberdingen, DE
• Manfred Schneegans · Vaterstetten, DE
• Patrick Schwarz · Burglengenfeld, DE

Key dates

• Filing date: Oct 1, 2018
• Grant date: Aug 4, 2020
• Expiry date: Nov 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/351
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.