Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates

US10738219B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Robert REICHARDT · Ludwigshafen am Rhein, DE
• Max Siebert · Ludwigshafen, DE
• Yongqing Lan · Potsdam, US
• Michael Lauter · Mannheim, DE
• Sheik Ansar Usman Ibrahim · Waterloo, BE
• Reza Golzarian · Beaverton, US
• Haci Osman GUEVENC · Heidelberg, DE
• Julian Proelss · Allschwil, CH
• Leonardus Leunissen · Ludwigshafen, DE

Key dates

• Filing date: Dec 16, 2015
• Grant date: Aug 11, 2020
• Expiry date: Dec 16, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C08K5/5435
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.