Process of forming an electronic device including an access region

US10797153B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Abhishek Banerjee · Houston, US
• Piet Vanmeerbeek · Sleidinge, BE
• Peter Moens · Zottegem, BE
• Marnix Tack · Merelbeke, BE
• Woochul Jeon · Phoenix, US
• Ali Salih · Mesa, US

Key dates

• Filing date: Jul 2, 2018
• Grant date: Oct 6, 2020
• Expiry date: Jul 2, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A process of forming an electronic device can include forming a channel layer overlying a substrate and forming a barrier layer overlying the channel layer. In an embodiment, the process can further include forming a p-type semiconductor layer over the barrier layer, patterning the p-type semiconductor layer to define at least part of a gate electrode of a transistor structure, and forming an access region layer over the barrier layer. In another embodiment, the process can further include forming an etch-stop layer over the barrier layer, forming a sacrificial layer over the etch-stop layer, patterning the etch-stop and sacrificial layers to define a gate region, forming an access region layer over the barrier layer after patterning the etch-stop and sacrificial layers, and forming a p-type semiconductor layer within the gate region.