High temperature vapor delivery system and method
US10954594B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Jun 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.