Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition
US11033930B2 · kind B2 · utility
0Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Jan 8, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D3/048
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.