Compute in memory circuits with time-to-digital computation

US11048434B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Raghavan Kumar · Hillsboro, US
• Phil Knag · Portland, US
• Gregory K. Chen · Ann Arbor, US
• Huseyin Ekin Sumbul · Portland, US
• Sasikanth Manipatruni · Ithaca, US
• Amrita Mathuriya · Portland, US
• Abhishek A. Sharma · Hillsboro, US
• Ram Krishnamurthy · Portland, US
• Ian A. Young · Portland, US

Key dates

• Filing date: Sep 28, 2018
• Grant date: Jun 29, 2021
• Expiry date: Sep 28, 2038

Classification

• Technology area (CPC G): Physics
• CPC primary: G06N3/049
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A memory circuit has compute-in-memory (CIM) circuitry that performs computations based on time-to-digital conversion (TDC). The memory circuit includes an array of memory cells addressable with column address and row address. The memory circuit includes CIM sense circuitry to sense a voltage for multiple memory cells triggered together. The CIM sense circuitry including a TDC circuit to convert a time for discharge of the multiple memory cells to a digital value. A processing circuit determines a value of the multiple memory cells based on the digital value.