Method of forming a semiconductor device
US11049956B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Jan 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
In one embodiment, a method of forming a semiconductor device forms gate trenches in a semiconductor substrate. A portion of the material between the trenches is narrowed and another material is formed on sidewalls of the narrowed portion that is substantially not etched by an etchant that etches the material of the portion of the material between the trenches. Source and gate contact openings are formed together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.