Silicon carbide field-effect transistor including shielding areas

US11101343B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Siemieniec · Villach, AT
• Thomas Aichinger · Faak am See, AT
• Thomas Basler · Riemerling, DE
• Wolfgang Bergner · Waldbüttelbrunn, DE
• Rudolf Elpelt · Erlangen, DE
• Romain Esteve · Munich, DE
• Michael Hell · Erlangen, DE
• Daniel Kueck · Villach, AT
• Caspar Leendertz · Munich, DE
• Dethard Peters · Edenkoben, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: May 6, 2019
• Grant date: Aug 24, 2021
• Expiry date: May 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/146
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.