Top via with next level line selective growth

US11171084B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Brent A. Anderson · Jericho, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Christopher J. Penny · Saratoga Springs, US
• Nicholas Anthony Lanzillo · Wynantskill, US
• Kisik Choi · Hopewell Junction, US
• Robert R. Robison · Colchester, US

Key dates

• Filing date: Apr 6, 2020
• Grant date: Nov 9, 2021
• Expiry date: Apr 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/7688
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present invention are directed to fabrication methods and resulting interconnect structures having a conductive thin metal layer on a top via that promotes the selective growth of the next level interconnect lines (the line above). In a non-limiting embodiment of the invention, a first conductive line is formed in a dielectric layer. A via is formed on the first conductive line and a seed layer is formed on the via and the dielectric layer. A surface of the seed layer is exposed and a second conductive line is deposited onto the exposed surface of the seed layer. In a non-limiting embodiment of the invention, the second conductive line is selectively grown from the seed layer.