VTFET with cell height constraints

US11189725B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Heng Wu · Guilderland, US
• Ruilong Xie · Niskayuna, US
• Lan Yu · Beijing, CN
• Alexander Reznicek · Troy, US
• Junli Wang · Slingerlands, US

Key dates

• Filing date: Jan 7, 2020
• Grant date: Nov 30, 2021
• Expiry date: Jan 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

Semiconductor devices and methods of forming the same include forming a restraint structure over a channel fin, having an opening that is smaller than a top surface of the channel fin. A top semiconductor structure is grown from the top surface of the channel fin, with lateral growth of the semiconductor structure being limited by the restraint structure.