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US11195792B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Brent A. Anderson · Jericho, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Christopher J. Penny · Saratoga Springs, US
• Kisik Choi · Hopewell Junction, US
• Nicholas Anthony Lanzillo · Wynantskill, US
• Robert R. Robison · Colchester, US

Key dates

• Filing date: Jan 10, 2020
• Grant date: Dec 7, 2021
• Expiry date: Feb 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53257
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure includes a first metallization layer disposed on a first etch stop layer. The first metallization layer includes a first conductive line and a second conductive line disposed in a first dielectric layer. The height of the first conductive line is greater than a height of the second conductive line. The semiconductor structure further includes a first via layer having a second dielectric layer disposed on a top surface of the first metallization layer and a first via in the second dielectric layer. The first via is configured to expose a portion of a top surface of the second conductive line. The semiconductor structure further includes a first conductive material disposed in the first via.