Patent · US Active

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates

US11264250B2 · kind B2 · utility

0Cited by

2References

21Claims

0Family size

Assignee

BASF SE

Inventors

Robert REICHARDT · Ludwigshafen am Rhein, DE
Max Siebert · Ludwigshafen, DE
Yongqing Lan · Potsdam, US
Michael Lauter · Mannheim, DE
Sheik Ansar Usman Ibrahim · Waterloo, BE
Reza Golzarian · Beaverton, US
Haci Osman GUEVENC · Heidelberg, DE
Julian Proelss · Allschwil, CH
Leonardus Leunissen · Ludwigshafen, DE

Key dates

Filing date	Apr 27, 2016
Grant date	Mar 1, 2022
Priority date	—
Expiry date	Mar 21, 2037

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC09K3/1463
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.