Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates

US11286402B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Robert REICHARDT · Ludwigshafen am Rhein, DE
• Max Siebert · Ludwigshafen, DE
• Yongqing Lan · Potsdam, US
• Michael Lauter · Mannheim, DE
• Sheik Ansar Usman Ibrahim · Waterloo, BE
• Reza Golzarian · Beaverton, US
• Haci Osman GUEVENC · Heidelberg, DE
• Julian Proelss · Allschwil, CH
• Leonardus Leunissen · Ludwigshafen, DE

Key dates

• Filing date: Dec 11, 2015
• Grant date: Mar 29, 2022
• Expiry date: Dec 11, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/461
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.