Patent · US Active

Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate

US11384432B2 · kind B2 · utility

2Cited by
20References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 9, 2015
Grant dateJul 12, 2022
Priority date
Expiry dateJul 21, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32834
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.