Selective tungsten deposition within trench structures
US11515200B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 3, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Feb 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.