Silicon carbide field-effect transistor including shielding areas

US11626477B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Siemieniec · Villach, AT
• Thomas Aichinger · Faak am See, AT
• Thomas Basler · Riemerling, DE
• Wolfgang Bergner · Waldbüttelbrunn, DE
• Rudolf Elpelt · Erlangen, DE
• Romain Esteve · Munich, DE
• Michael Hell · Erlangen, DE
• Daniel Kueck · Villach, AT
• Caspar Leendertz · Munich, DE
• Dethard Peters · Edenkoben, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Jul 14, 2021
• Grant date: Apr 11, 2023
• Expiry date: Jul 14, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/146
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.