Chip containing an onboard non-volatile memory comprising a phase-change material
US11653582B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 8, 2018 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Nov 8, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic chip includes memory cells made of a phase-change material and a transistor. First and second vias extend from the transistor through an intermediate insulating layer to a same height. A first metal level including a first interconnection track in contact with the first via is located over the intermediate insulating layer. A heating element for heating the phase-change material is located on the second via, and the phase-change material is located on the heating element. A second metal level including a second interconnection track is located above the phase-change material. A third via extends from the phase-change material to the second interconnection track.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.