Dual plasma pre-clean for selective gap fill
US11721542B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Nov 23, 2020 |
| Grant date | Aug 8, 2023 |
| Priority date | — |
| Expiry date | Nov 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.