Method of using dual frequency RF power in a process chamber

US11721545B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Anup K. Singh · Media, US
• Rick Kustra · San Jose, US
• Vinayak Vishwanath Hassan · San Francisco, US
• Bhaskar Kumar · Santa Clara, US
• Krishna Nittala · Sunnyvale, US
• Pramit Manna · Sunnyvale, US
• Kaushik Alayavalli · Sunnyvale, US
• Ganesh Balasubramanian · Sunnyvale, US

Key dates

• Filing date: Sep 28, 2020
• Grant date: Aug 8, 2023
• Expiry date: Apr 7, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0332
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 Å in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.