Patent · US Active

Chemical mechanical polishing of substrates containing copper and ruthenium

US11725117B2 · kind B2 · utility

0Cited by

5References

17Claims

0Family size

Assignee

BASF SE

Inventors

Haci Osman GUEVENC · Heidelberg, DE
Michael Lauter · Mannheim, DE
Te Yu Wei · Taoyuan, TW
Wei-Lan Chiu
Reza Golzarian · Beaverton, US
Julian Proelss · Allschwil, CH
Leonardus Leunissen · Ludwigshafen, DE

Key dates

Filing date	Dec 11, 2019
Grant date	Aug 15, 2023
Priority date	—
Expiry date	Dec 11, 2039

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC09K3/1463
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.