Creating ion energy distribution functions (IEDF)
US11728124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2021 |
| Grant date | Aug 15, 2023 |
| Priority date | — |
| Expiry date | Jul 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32715
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.