Patent · US Active

Method for cleaning semiconductor wafers

US11752529B2 · kind B2 · utility

0Cited by

11References

23Claims

0Family size

Assignee

ACM RESEARCH (SHANGHAI), INC. · CN

Inventors

Hui Wang · Shanghai, CN
Fufa Chen · Cupertino, US
Fuping Chen · Shanghai, CN
Jian Wang · Rosharon, US
Xi Wang · Shanghai, CN
Xiaoyan Zhang · Shanghai, CN
Yinuo Jin · Shanghai, CN
Zhaowei Jia · Shanghai, CN
Liangzhi Xie · Shanghai, CN
Jun Wang · Nanhu, CN
Xuejun Li · Shanghai, CN

Key dates

Filing date	Nov 15, 2017
Grant date	Sep 12, 2023
Priority date	—
Expiry date	Oct 11, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG08B25/08
WIPO fieldChemical engineering
WIPO sectorChemistry

Abstract

A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: delivering a cleaning liquid over a surface of a semiconductor wafer during a cleaning process; and imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.