High density ferroelectric random access memory (FeRAM) devices and methods of fabrication
US11832451B1 · kind B1 · utility
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Key dates
| Filing date | Aug 6, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Aug 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
Non lead-based perovskite ferroelectric devices for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.