Patent · US Active

Methods and apparatus for cleaning semiconductor wafers

US11967497B2 · kind B2 · utility

0Cited by
13References
16Claims
0Family size

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Key dates

Filing dateJan 13, 2022
Grant dateApr 23, 2024
Priority date
Expiry dateDec 25, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67057
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ1, or comparing the detected power off time with a preset time τ2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ1, or the detected power off time is shorter than the preset time τ2, or the detected amplitude of any waveform is larger than the preset value,…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.