Gate contact structures and cross-coupled contact structures for transistor devices
US12002869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2022 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Sep 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.