Vacuum pump protection against deposition byproduct buildup
US12087561B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2023 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Jun 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.