Backside electrical contacts to buried power rails

US12136655B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ruilong Xie · Niskayuna, US
• Brent A. Anderson · Jericho, US
• Albert M. Young · Fishkill, US
• Kangguo Cheng · Schenectady, US
• Julien Frougier · Albany, US
• Balasubramanian Pranatharthiharan · Watervliet, US
• Roy R. Yu · Poughkeepsie, US
• Takeshi Nogami · Schenectady, US

Key dates

• Filing date: Sep 22, 2021
• Grant date: Nov 5, 2024
• Expiry date: Jan 22, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6713
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a dielectric isolation layer, a plurality of gates formed above the dielectric isolation layer, a plurality of source/drain regions above the dielectric isolation layer between the plurality of gates, and at least one contact placeholder for a backside contact. The at least one contact placeholder contacts a bottom surface of a first source/drain region of the plurality of source/drain regions. The semiconductor device further includes at least one backside contact contacting a bottom surface of a second source/drain region of the plurality of source/drain regions, and a buried power rail arranged beneath, and contacting the at least one backside contact.