Albert M. Young
44Patents
9h-index
86Co-inventors
78Inventor score
Filing activity: May 7, 1999 → Mar 14, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6396298B1 | Active feedback pulsed measurement method | Physics | 101 | Expired |
| US8546188B2 | Bow-balanced 3D chip stacking | Electricity | 62 | Active |
| US6177836A | Feed forward linearized traveling wave tube | Electricity | 37 | Expired |
| US7214346B2 | Optoelectronic detection system | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7217513B2 | Apparatus and method for isolating a nucleic acid from a sample | Performing Operations; Transporting | 17 | Expired |
| US6127899A | High frequency anharmonic oscillator for the generation of broadband deterministic noise | Electricity | 17 | Expired |
| US7913202B2 | Wafer level I/O test, repair and/or customization enabled by I/O layer | Physics | 16 | Active |
| US7521950B2 | Wafer level I/O test and repair enabled by I/O layer | Physics | 16 | Active |
| US7256649B2 | Multiple signal intermodulation reduction system | Electricity | 15 | Expired |
| US7129783B2 | Hybrid active combiner and circulator | Electricity | 9 | Expired |
| US7683478B2 | Hermetic seal and reliable bonding structures for 3D applications | Electricity | 7 | Active |
| US7947509B2 | Optoelectronic detection system | Emerging Cross-Sectional Technologies | 7 | Active |
| US7847597B1 | Precision frequency change detector | Physics | 6 | Active |
| US8298914B2 | 3D integrated circuit device fabrication using interface wafer as permanent carrier | Electricity | 5 | Active |
| US7528056B2 | Low-cost strained SOI substrate for high-performance CMOS technology | Electricity | 5 | Active |
| US7545667B2 | Programmable via structure for three dimensional integration technology | Electricity | 4 | Active |
| US8492869B2 | 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer | Electricity | 4 | Active |
| US7999377B2 | Method and structure for optimizing yield of 3-D chip manufacture | Electricity | 2 | Active |
| US7737003B2 | Method and structure for optimizing yield of 3-D chip manufacture | Electricity | 2 | Active |
| US9005989B2 | Optoelectronic detection system | Emerging Cross-Sectional Technologies | 2 | Active |
| US7652278B2 | Programmable via structure and method of fabricating same | Electricity | 2 | Active |
| US7786596B2 | Hermetic seal and reliable bonding structures for 3D applications | Electricity | 2 | Active |
| US7732798B2 | Programmable via structure for three dimensional integration technology | Electricity | 2 | Active |
| US8828800B2 | Method of forming adaptive interconnect structure having programmable contacts | Electricity | 1 | Active |
| US8399336B2 | Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.