Doping techniques
US12261047B2 · kind B2 · utility
0Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2022 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Jun 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.