Patent · US Active

Chemical mechanical polishing of substrates containing copper and ruthenium

US12351737B2 · kind B2 · utility

0Cited by

5References

12Claims

0Family size

Assignee

BASF SE

Inventors

Haci Osman GUEVENC · Heidelberg, DE
Michael Lauter · Mannheim, DE
Te Yu Wei · Taoyuan, TW
Wei-Lan Chiu
Reza Golzarian · Beaverton, US
Julian Proelss · Allschwil, CH
Leonardus Leunissen · Ludwigshafen, DE

Key dates

Filing date	Sep 14, 2023
Grant date	Jul 8, 2025
Priority date	—
Expiry date	Sep 14, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/3212
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.