Self field-suppression CVD tungsten (W) fill on PVD W liner
US12406884B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Jun 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.