Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US4854263A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 1987 |
| Grant date | Aug 8, 1989 |
| Priority date | — |
| Expiry date | Aug 14, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/5096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.