Semiconductor device and semiconductor memory device
US5115289A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1991 |
| Grant date | May 19, 1992 |
| Priority date | — |
| Expiry date | Aug 5, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76278
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, such as an FET or a charge coupled device, is provided having a channel or a charge coupled portion formed in a thin semiconductor layer which is substantially perpendicular to the substrate. Necessary electrodes, such as the gate electrode, and necessary insulating layers can be added at the thin semiconductor layer, and can maintain the necessary amount of electric current by securing the height of the semiconductor layer. The structure has the advantage that it can have its plane size reduced. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.