Dry etching method
US5411631A · kind A · utility
46Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1993 |
| Grant date | May 2, 1995 |
| Priority date | — |
| Expiry date | Nov 12, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to this invention, a dry etching method includes the step of sequentially forming an SiO.sub.2 film, an Al--Si--Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al--Si--Cu thin film by RIE using a gas mixture of Cl.sub.2 and BCl.sub.3 as an etching gas, and the step of removing etching residues by a sputter effect obtained by the plasma of the BCl.sub.3 gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.