Substrate support with pressure zones having reduced contact area and temperature feedback
US5761023A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Apr 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved substrate support and method for operating in which multiple pressure zones are provided on the surface of the substrate support. A seal area is provided between the different zones to allow different gas pressures in the two zones. A higher gas pressure is provided to a zone corresponding to an area of the substrate where greater heat transfer is desired. The gap between the substrate support and the gas pressure are selected to provide the desired amount of heat transfer. Another aspect is limited substrate contact using protrusions, to maximize heat transfer gas flow. A closed loop control system varies the heat transfer gas pressure in accordance with a temperature sensor. For an electrostatic chuck, the dielectric thickness is varied to give a higher electrostatic force at the periphery of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.