Method for protecting against deposition on a selected region of a substrate
US5871811A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Feb 16, 1999 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02263
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.