Temperature control system for semiconductor process chamber
US6015465A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1998 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Apr 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67023
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A temperature control system 10 is used to control the temperature of a chamber surface 15, such as a convoluted external surface, of a process chamber 25 that is used to process a semiconductor substrate 30. The temperature control system 10 comprises a vapor chamber 100 that forms an enclosure adjoining or surrounding the process chamber surface 15. A fluid distributor 115 in the vapor chamber 100 applies a fluid film 130 onto the process chamber surface 15. Vaporization of the fluid film 130 from the chamber surface 15 controls the temperature of the chamber surface. Optionally, a vent 165 in the vapor chamber 100 can be used to adjust the vaporization temperature of the fluid in the vapor chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.