High density plasma process chamber
US6095084A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1997 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Jul 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32559
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.