Method for transferring patterns created by lithography
US6140023A · kind A · utility
18Cited by
7References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1998 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Dec 1, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lithographic process for fabricating sub-micron features is provided. A silicon containing ultra-thin photoresist is formed on an underlayer surface to be etched. The ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern. The ultra-thin photoresist is oxidized so as to convert the silicon therein to silicon dioxide. The oxidized ultra-thin photoresist layer is used as a hard mask during an etch step to transfer the pattern to the underlayer. The etch step includes an etch chemistry that is highly selective to the underlayer over the oxidized ultra-thin photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.