Ultra-thin resist and oxide/nitride hard mask for metal etch
US6171763A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1998 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Dec 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, a silicon nitride layer over the metal layer, and an oxide layer over the silicon nitride layer; depositing an ultra-thin photoresist over the oxide layer, the ultra-thin photoresist having a thickness less than about 2,000 .ANG.; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the silicon nitride layer; etching the exposed portion of the silicon nitride layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.